Global Gallium Nitride Semiconductor Devices Market Insights Forecasts to 2033

• The Global Gallium Nitride Semiconductor Devices Market Size was estimated at USD 2.52 Billion in 2023
• The Market Size is Expected to Grow at a CAGR of around 26.5% from 2023 to 2033
• The Worldwide Gallium Nitride Semiconductor Devices Market Size is Expected to Reach USD 26.44 Billion by 2033
• Asia Pacific is Expected to Grow the fastest during the forecast period.

The Global Gallium Nitride Semiconductor Devices market size was worth around USD 2.52 Billion in 2023 and is predicted to grow to around USD 26.44 Billion by 2033 with a compound annual growth rate (CAGR) of approximately 26.5% between 2023 and 2033. The growth of the market can be attributed to the ability of gallium semiconductors to provide high-speed performance as well as contribute to lower carbon emissions, which position them as effective devices in the field of electronics.

Market Overview

The gallium nitride (GaN) semiconductor device market is the global market of electronic devices utilizing gallium nitride as the main semiconductor material. Gallium nitride (GaN) has a wide band gap that allows the device to be more compact and support larger electric fields. With the increasing global demand for electric vehicles, the GaN semiconductor device market is set to grow significantly, playing a critical role in driving the mass adoption of electric transportation solutions. This transformation not only reflects the automotive sector's focus on sustainability but also marks a paradigm shift towards cleaner and more efficient mobility solutions globally. Furthermore, taking advantage of GaN's high speed, efficiency, and reliability, GaN-equipped robotic systems provide unparalleled precision and control, vital for complex surgeries. Such next-generation robots, made possible through GaN semiconductor devices, allow healthcare professionals to conduct minimally invasive surgeries with unmatched accuracy, reducing patient trauma and recovery periods.

Report Coverage

This research report categorizes the global gallium nitride semiconductor devices market based on various segments and regions forecasts revenue growth and analyzes trends in each submarket. The report analyses the key growth drivers, opportunities, and challenges influencing the global gallium nitride semiconductor devices market. Recent market developments and competitive strategies such as expansion, type launch, development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key market players and analyses their core competencies in each sub-segment of the global gallium nitride semiconductor devices market.

Driving Factors

The growing need for consumer electronics like laptops, smartphones, power adapters, high-speed chargers, LED lighting, smart home products, and gaming products is anticipated to significantly contribute to the growth of this market. The application of GaN semiconductor devices in consumer electronics provides high power density and increases efficiency. Thus, their growing demand in the consumer electronics sector and from business companies is anticipated to drive the growth of the market.

Restraining Factors

The potential advantages of gallium nitride semiconductors, including greater power density and efficiency, are intriguing, but the huge up-front investment necessary represents a significant obstacle for market beginners and smaller players, possibly hindering the market's growth and accessibility.

Market Segmentation

The global gallium nitride semiconductor devices market share is classified into product, component, and wafer size.

• The opto-semiconductors segment accounted for the largest share in 2023 and is projected to grow at a substantial CAGR during the forecast period.

In the terms of product, the global gallium nitride semiconductor devices market is divided into GaN radio frequency devices, opto-semiconductors, and power semiconductors. Among these, the opto-semiconductors segment accounted for the largest share in 2023 and is projected to grow at a substantial CAGR during the forecast period. The growth in the segment is due to the use of opto-semiconductors in products like LEDs, solar cells, photodiodes, lasers, and optoelectronics. The automotive industry is also using opto-semiconductors in car lights, indoor lighting, and outdoor lighting, as well as pulse-powered lasers.

• The power IC segment accounted for the highest share in 2023 and is anticipated to grow at a significant CAGR during the forecast period.

In the terms of component, the global gallium nitride semiconductor devices market is divided into power IC, transistor, rectifier, diode, and others. Among these, the power IC segment accounted for the highest share in 2023 and is anticipated to grow at a significant CAGR during the forecast period. The growth in the segment is spurred by the rising adoption of GaN-based power ICs with features of efficient navigation, collision avoidance, and air traffic control in real time.

• The 4-inch segment accounted for the largest share in 2023 and is anticipated to grow at a remarkable CAGR during the forecast period.

In the terms of wafer size, the global gallium nitride semiconductor devices market is divided into 2-inch, 4-inch, 6-inch, and 8-inch. Among these, the 4-inch segment accounted for the largest share in 2023 and is anticipated to grow at a remarkable CAGR during the forecast period. The growing need for gallium nitride devices with 4-inch wafers in high-power amplifiers, optoelectronics devices, telecom frontends, and high-temperature devices is fueling the segment's growth.

Regional Segment Analysis of the Global Gallium Nitride Semiconductor Devices Market

• North America (U.S., Canada, Mexico) 
• Europe (Germany, France, U.K., Italy, Spain, Rest of Europe)
• Asia-Pacific (China, Japan, India, Rest of APAC)
• South America (Brazil and the Rest of South America) 
• The Middle East and Africa (UAE, South Africa, Rest of MEA)

North America is anticipated to hold the largest share of the global gallium nitride semiconductor devices market over the predicted timeframe.

North America is anticipated to hold the largest share of the global gallium nitride semiconductor devices market over the predicted timeframe. Growing investments from the defense and aerospace sectors in research & development are driving the market growth in the region. In addition, government funding to semiconductor firms is anticipated to drive market growth in the region. Firms in this region are also targeting the release of the commercialization rights for a series of gallium nitride-on silicon (GaN-on-Si) patents.

Asia Pacific is expected to grow at the fastest CAGR in the global gallium nitride semiconductor devices market during the forecast period. The presence of a few established semiconductor production firms like Toshiba (Japan), Nichia Corporation (Japan), and Mitsubishi Electric (Japan) and growing integration in consumer & business enterprise verticals, innovation, and industrial development initiatives by governments are the key drivers of market growth in Asia Pacific.

Competitive Analysis:

The report offers the appropriate analysis of the key organizations/companies involved within the global gallium nitride semiconductor devices market along with a comparative evaluation primarily based on their type of offering, business overviews, geographic presence, enterprise strategies, segment market share, and SWOT analysis. The report also provides an elaborative analysis focusing on the current news and developments of the companies, which includes type development, innovations, joint ventures, partnerships, mergers & acquisitions, strategic alliances, and others. This allows for the evaluation of the overall competition within the market.

List of Key Companies

• Efficient Power Conversion Corporation
• Fujitsu Ltd.
• Infineon Technologies AG
• Transphorm, Inc.
• NXP Semiconductors.
• Texas Instruments Incorporated.
• Qorvo, Inc
• Toshiba Corporation
• GaN Systems
• NTT Advanced Technology Corporation.
• Others

Key Target Audience

• Market Players
• Investors
• End-users
• Government Authorities 
• Consulting And Research Firm
• Venture capitalists
• Value-Added Resellers (VARs)

Recent Development

• In March 2024, Efficient Power Conversion Corporation launched EPC2361, a groundbreaking gallium nitride (GaN) field-effect transistor (FET) boasting the lowest on-resistance on the market at 100V, 1mΩ. This innovation promises to double the power density when compared to EPC's previous-generation products. The EPC2361 exhibits an impressive typical RDS (on) of only 1mΩ, housed in a thermally enhanced QFN package with an exposed top, occupying a mere footprint of 3mm x 5mm.

Market Segment

This study forecasts revenue at global, regional, and country levels from 2023 to 2033. Spherical Insights has segmented the global gallium nitride semiconductor devices market based on the below-mentioned segments: 

Global Gallium Nitride Semiconductor Devices Market, By Product 

• GaN Radio Frequency Devices
• Opto-semiconductors
• Power Semiconductors

Global Gallium Nitride Semiconductor Devices Market, By Component 

• Power IC
• Transistor
• Rectifier
• Diode
• Others

Global Gallium Nitride Semiconductor Devices Market, By Wafer Size

• 2-inch
• 4-inch
• 6-inch
• 8-inch

Global Gallium Nitride Semiconductor Devices Market, By Regional Analysis

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • France
  • Italy
  • Spain
  • Russia
  • Rest of Europe
• Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Rest of Asia Pacific
• South America
  • Brazil
  • Argentina
  • Rest of South America
• Middle East & Africa
  • UAE
  • Saudi Arabia
  • Qatar
  • South Africa
  • Rest of the Middle East & Africa