Global IGBT And Super Junction MOSFET Market Size, Share, and COVID-19 Impact Analysis, By Type (IGBT and Super Junction MOSFET), By Application (Energy and Power, Consumer Electronics, Inverter and UPS, Electric Vehicle, Industrial System, and Others), and By Region (North America, Europe, Asia-Pacific, Latin America, Middle East, and Africa), Analysis and Forecast 2023 - 2033

Global IGBT And Super Junction MOSFET Market Insights Forecasts to 2033

• The Global IGBT And Super Junction MOSFET Market Size was Estimated at USD 14.62 Billion in 2023
• The Market Size is Expected to Grow at a CAGR of around 12.5% from 2023 to 2033
• The Worldwide IGBT And Super Junction MOSFET Market Size is Expected to Reach USD 47.46 Billion by 2033
• North America is Expected to Grow the fastest during the forecast period.

The Global IGBT And Super Junction MOSFET Market Size was worth around USD 14.62 Billion in 2023 and is predicted to Grow to around USD 47.46 Billion by 2033 with a CAGR of around 12.5% between 2023 and 2033. The industrial sector’s growing focus on automation and energy efficiency has contributed to the market growth. 

Market Overview

The super junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated-Gate Bipolar Transistor) market is the business involved in the manufacturing and sale of these semiconductor devices. IGBTs are applied in different electronic devices and applications, including consumer electronics and electric vehicles because they can support high voltage and high current. Super junction MOSFETs are specifically developed to eliminate the defects of conventional MOSFETs and are employed in high-power applications. In addition, industries have increasingly utilized sophisticated power electronics to maximize energy utilization and improve operating efficiency. IGBTs and super junction MOSFETs have been extensively utilized by manufacturers in industrial motor drives, UPS, and other high-power applications due to their better-switching properties and thermal handling. Additionally, the growth of the market has been largely driven by the developments in semiconductor technology. Ongoing research and development activities have resulted in the launch of new and enhanced IGBT and super junction MOSFET products with improved performance features, including lower on-resistance, increased switching speeds, and improved thermal management.

Report Coverage

This research report categorizes the global IGBT and super junction MOSFET market based on various segments and regions forecasts revenue growth and analyzes trends in each submarket. The report analyses the key growth drivers, opportunities, and challenges influencing the global IGBT and super junction MOSFET market. Recent market developments and competitive strategies such as expansion, type launch, development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key market players and analyses their core competencies in each sub-segment of the global IGBT and super junction MOSFET market.

Driving Factors

The increasing demand for energy-efficient and high-performance power electronic devices across industries like automotive, renewable energy, industrial automation, and consumer electronics is fueling market expansion. The shift toward electric vehicles (EVs) and hybrid electric vehicles (HEVs), which require advanced power semiconductors for efficient energy conversion, is a major contributor. Additionally, the growth of renewable energy systems, such as solar and wind, which rely on efficient power conversion technologies, further boosts the demand for IGBTs and MOSFETs.

Restraining Factors

Competition from other power semiconductors is likely to hinder the growth of the global IGBT and super junction MOSFET market during the forecast period.

Market Segmentation

The global IGBT and super junction MOSFET market share is classified into type and application.

• The IGBT segment accounted for the largest share in 2023 and is projected to grow at a remarkable CAGR during the forecast period.

In the terms of type, the global IGBT and super junction MOSFET market is divided into IGBT and super junction MOSFET. Among these, the IGBT segment accounted for the largest share in 2023 and is projected to grow at a remarkable CAGR during the forecast period. The growth in the segment is fueled due to their extensive application in consumer electronics and industrial uses. The demand for energy-efficient appliances and the smart home device trend has increasingly required effective power management solutions such as discrete IGBTs.

• The energy and power segment accounted for the highest revenue share in 2023 and is anticipated to grow at a significant CAGR during the forecast period.

In the terms of application, the global IGBT and super junction MOSFET market is divided into energy and power, consumer electronics, inverter and UPS, electric vehicle, industrial system, and others. Among these, the energy and power segment accounted for the highest revenue share in 2023 and is anticipated to grow at a significant CAGR during the forecast period. The growth in the segment can be attributed to the growing transition towards sustainable energy solutions, the market glimpsed an increasing demand for power conversion and management systems that are efficient in solar and wind energy applications. IGBTs and super junction MOSFETs are the key devices in photovoltaic inverters and wind turbine systems as they dramatically improve the efficiency and reliability of power conversion processes.

Regional Segment Analysis of the Global IGBT And Super Junction MOSFET Market

• North America (U.S., Canada, Mexico) 
• Europe (Germany, France, U.K., Italy, Spain, Rest of Europe)
• Asia-Pacific (China, Japan, India, Rest of APAC)
• South America (Brazil and the Rest of South America) 
• The Middle East and Africa (UAE, South Africa, Rest of MEA)

Asia Pacific is anticipated to hold the largest share of the global IGBT and super junction MOSFET market over the predicted timeframe.

Asia Pacific is anticipated to hold the largest share of the global IGBT and super junction MOSFET market over the predicted timeframe. Regions such as China, India, and Southeast Asian countries have experienced a tremendous expansion in industrial processes, which prompted the demand for effective power management solutions to rise. Moreover, growth in the automotive and PV inverter manufacturing industries in the APAC region is likely to drive adoption over the next few years. The expansion of the high-speed train network is estimated to build a high demand for power semiconductors.

North America is expected to grow at the fastest CAGR in the global IGBT and super junction MOSFET market during the forecast period. The growth in the region is due to a high rise in the deployment of solar and wind power systems, fueled by government policies and business sustainability initiatives. IGBT and super junction MOSFET play a critical role in these applications, especially in wind turbine systems and photovoltaic inverters since they improve the reliability of power conversion processes, minimizing carbon emissions and encouraging clean energy.

Competitive Analysis:

The report offers the appropriate analysis of the key organizations/companies involved within the global IGBT and super junction MOSFET market along with a comparative evaluation primarily based on their type of offering, business overviews, geographic presence, enterprise strategies, segment market share, and SWOT analysis. The report also provides an elaborative analysis focusing on the current news and developments of the companies, which includes type development, innovations, joint ventures, partnerships, mergers & acquisitions, strategic alliances, and others. This allows for the evaluation of the overall competition within the market.

List of Key Companies

• STMicroelectronics
• ROHM CO., LTD.
• Infineon Technologies AG
• TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
• Infineon Technologies AG
• Semikron Danfoss
• Mitsubishi Electric Corporation
• Fuji Electric Co., Ltd.
• StarPower Europe AG
• MACMIC
• NXP Semiconductors
• Others

Key Target Audience

• Market Players
• Investors
• End-users
• Government Authorities 
• Consulting And Research Firm
• Venture capitalists
• Value-Added Resellers (VARs) 

Recent Development

• In June 2024, Infineon Technologies AG launched the 600 V CoolMOS S7TA super junction MOSFET, specifically designed for automotive power management applications. This new MOSFET incorporates an integrated temperature sensor, enhancing the precision of junction temperature sensing.

Market Segment

This study forecasts revenue at global, regional, and country levels from 2023 to 2033. Spherical Insights has segmented the global IGBT and super junction MOSFET market based on the below-mentioned segments: 

Global IGBT And Super Junction MOSFET Market, By Type

• IGBT 
• Super Junction MOSFET

Global IGBT And Super Junction MOSFET Market, By Application

• Energy and Power
• Consumer Electronics
• Inverter and UPS
• Electric Vehicle
• Industrial System
• Others

Global IGBT And Super Junction MOSFET Market, By Regional Analysis

• North America
  • US
  • Canada
  • Mexico
• Europe
  • Germany
  • UK
  • France
  • Italy
  • Spain
  • Russia
  • Rest of Europe
• Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Rest of Asia Pacific
• South America
  • Brazil
  • Argentina
  • Rest of South America
• Middle East & Africa
  • UAE
  • Saudi Arabia
  • Qatar
  • South Africa
  • Rest of the Middle East & Africa